Proceedings/4th. Tri-service cathode workshop, Washington DC, U.S.A., 3-5 April 1984HAAS, T. W.Applied surface science. 1985, Vol 24, Num 3-4, pp 287-598, issn 0169-4332Conference Proceedings

In situ ellipsometric study of As capping and low temperature molecular-beam epitaxy GaAs growth and implications for the low temperature critical thicknessEYINK, K. G; CONG, Y. S; GILBERT, R et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 4, pp 1423-1426, issn 1071-1023Conference Paper

Morphology of Al-Ni-Ge ohmic contacts to n-GaAs as a function of contact compositionLIN, X. W; LAMPERT, W. V; SWIDER, W et al.Thin solid films. 1994, Vol 253, Num 1-2, pp 490-495, issn 0040-6090Conference Paper

Deposition and properties of MoS₂ thin films grown by pulsed laser evaporation = Dépôt et propriétés de couches minces de MoS₂ obtenues par évaporation sous laser pulséDONLEY, M. S; MURRAY, P. T; BARBER, S. A et al.Surface & coatings technology. 1988, Vol 36, Num 1-2, pp 329-340, issn 0257-8972Conference Paper

Use of optical fiber pyrometry in molecular beam epitaxyEYINK, K. G; PATTERSON, J. K; ADAMS, S. J et al.Journal of crystal growth. 1997, Vol 175-76, pp 262-266, issn 0022-0248, 1Conference Paper

Observation of low-T GaAs growth regimes by real-time ellipsometryEYINK, K. G; CONG, Y. S; CAPANO, M. A et al.Journal of electronic materials. 1993, Vol 22, Num 12, pp 1387-1390, issn 0361-5235Article

X-ray analysis of GaAs layers on GaAs(001) and GaAS(111)B surfaces grown at low temperatures by molecular beam epitaxyCAPANO, M. A; YEN, M. Y; EYINK, K. G et al.Applied physics letters. 1991, Vol 58, Num 17, pp 1854-1856, issn 0003-6951Article

Coadsorption of Ba and O on polycrystalline W = Coadsorption de Ba et O sur W polycristallinLAMARTINE, B. C; CZARNECKI, J. V; HAAS, T. W et al.Applied surface science. 1986, Vol 26, Num 1, pp 61-76, issn 0169-4332Article

Strain effects on thermal transitions and mechanical properties of thermoplastic polyurethane elastomersCRAWFORD, D. M; BASS, R. G; HAAS, T. W et al.Thermochimica acta. 1998, Vol 323, Num 1-2, pp 53-63, issn 0040-6031Article

Photoreflectance of Al_xGa_1-xAs/GaAs interfaces and high-electron-mobility transistorsSYDOR, M; JAHREN, N; MITCHEL, W. C et al.Journal of applied physics. 1990, Vol 67, Num 12, pp 7423-7429, issn 0021-8979Article

Dynamics of reflection high-energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on (111)B GaAs substratesYEN, M. Y; HAAS, T. W.Applied physics letters. 1990, Vol 56, Num 25, pp 2533-2535, issn 0003-6951Article

Photoreflectance measurements of unintentional impurity concentrations in undoped GaAsSYDOR, M; ANGELO, J; MITCHEL, W et al.Journal of applied physics. 1989, Vol 66, Num 1, pp 156-160, issn 0021-8979, 5 p.Article